? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 120 a i dm t c = 25 c, pulse width limited by t jm 480 a i ar t c = 25 c 120 a e ar t c = 25 c64mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 600 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s - c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 200 v v gs(th) v ds = v gs , i d = 8ma 2 4 v i gss v gs = 20 v, v ds = 0 200 n a i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 17 m ? note 1 ds96538d(03/03) ixfn 120n20 v dss = 200 v i d25 = 120 a r ds(on) = 17 m ? ? ? ? ? t rr 250 ns hiperfet tm power mosfets single mosfet die n-channel enhancement mode avalanche rated, high dv/dt, low t rr s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features ? encapsulating epoxy meets ul 94 v-0, flammability classification ? international standard package ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls ? low voltage relays advantages ? easy to mount ? space savings ? high power density
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 40 77 s c iss 9100 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 2200 pf c rss 1000 pf t d(on) 42 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 ns t d(off) r g = 1 ? (external), 110 n s t f 40 ns q g(on) 360 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 nc q gd 160 nc r thjc 0.22 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive; 480 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.1 c i rm 13 a i f = 50a,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % ixfn 120n20 minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2003 ixys all rights reserved ixfn 120n20 fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 12 0 15 0 18 0 012345 v ds - volts i d - amperes v gs = 1 0v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 20 40 60 80 10 0 12 0 0 12345 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 20 40 60 80 10 0 12 0 0 0.5 1 1.5 2 2.5 3 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalize d i d = 1 20a i d = 60a v gs = 1 0v fig. 6. drain current vs. case temperature 0 20 40 60 80 10 0 12 0 14 0 -50 -25 0 25 50 75 100 125 150 t c - degr ees centigr ade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 0 30 60 90 120 150 180 i d - amperes r ds(on) - normalized t j = 1 25oc t j = 25oc v gs = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfn 120n20 fig. 11. capacitance 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 50 100 150 200 250 300 q g - nanocoulombs v gs - volts v ds = 1 00v i d = 60a i g = 1 0ma fig. 7. input admittance 0 30 60 90 12 0 15 0 3 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 12. maximum transient thermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - (oc/w) fig. 8. transconductance 0 20 40 60 80 10 0 12 0 0 30 60 90 120 150 180 i d - amperes g fs - siemens t j = 25oc fig. 9. source current vs. source-to-drain voltage 0 40 80 12 0 16 0 200 0.4 0.55 0.7 0.85 1 1.15 1.3 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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